• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The invention relates to a method for texturing a semiconductor substrate (1) comprising the steps of forming in an etching mask (2), by non-homogeneous reactive ion etching, a plurality of cavities of shapes, depths and distribution. random, forming a first random rough pattern, and etching the substrate through the etching mask, by reactive ion etching, so as to transfer the first random rough pattern into the substrate and obtain on the surface of the substrate a second rough pattern random (200) composed of cavities (20) of shapes, depths (d2r) and random distribution.
    公开号:FR3022070A1
    申请号:FR1455068
    申请日:2014-06-04
    公开日:2015-12-11
    发明作者:Ludovic Escoubas；Gerard Jean Louis Berginc；Jean-Jacques Simon；Vincent Brissonneau
    申请人:Aix Marseille Universite；Centre National de la Recherche Scientifique CNRS；Thales SA；
    IPC主号:
    专利说明:

    [0001] The present invention relates to a method for random texturing of a semiconductor substrate. It is known that the texturing of a semiconductor substrate, that is to say the fact of conferring on the substrate a controlled roughness, makes it possible to increase its optical absorption in the visible or the infrared. Texturing techniques thus find various applications in the field of the manufacture of optoelectronic photoreceptor or photoemitter components, in particular imagers and photovoltaic cells, for producing photofunctional surfaces (receiving or transmitting surfaces) which are anti-reflective and which improve the performance of these photoreceptors. components. The present invention more particularly relates to the texturing of a semiconductor substrate by reactive ion etching, this technique combining chemical etching and physical etching from the same ionized gaseous composition. The article "Silicon surface texturing by reactive ion etching" by H.F.W. Dekkers, F. Duerinckx, J. Szlufcik and J. NilS, OPTO-ELECTRONICS REVIEW 8 (4), 311-316 (2000), 25 discloses a method of texturing a [111] type silicon substrate. subject the substrate to the reactive ion etching process. Such a method, often used for the treatment of solar cells, only makes it possible to obtain roughness of low amplitude, less than one micrometer, and a slight reduction in the reflectivity of the material in wavelengths of the order of 400-750 nm, in the visible. In addition, the etching process stops spontaneously when the crystal structure [111] has reorganized at the substrate surface. The present invention aims to obtain a higher roughness, and more particularly the production of rough patterns with a depth of the order of a micrometer to a few micrometers, to improve the absorption in the near infrared, and more particularly in the wavelength range from 1000 to 1200 nm where the majority of night imaging applications are located, such as infrared video surveillance or night vision. It can be shown that the absorption rate offered by an ordered and homogeneous rough surface, for example a regular network of substantially identical cavities, depends on the depth of the cavities that constitute it and their period, and that the wavelength at which the network has maximum absorption depends on the period of these cavities. For example, the absorption of a network of identical cavities of a period of the order of one micrometer and a depth also of the order of one micrometer is maximum in the vicinity of the wavelength 1000 nm. To obtain a roughness higher than that which allows the direct etching of a substrate, it is known to use an etching mask. For example, the application WO 2010/109692 describes a method for rendering a rough substrate comprising steps of depositing a hard mask on the substrate, making openings in the mask by means of a laser, wet etching isotropic of the substrate by means of an acidic solution, through the apertures, to form cuvettes in the substrate, then anisotropic wet etching of the cuvettes by means of an alkaline solution, still through the openings, to obtain cavities of inverted pyramidal shape. In the same vein, the patent application FR 2 981 196 describes a method of structuring a semiconductor substrate by etching thereof through a sacrificial layer having been previously etched by photolithography so as to form islets. This method makes it possible to obtain cavities of substantially homogeneous shape, having substantially identical dimensions and shapes, in particular in the shape of "V" or "U", with a depth of the order of ten micrometers and up to a few tens of micrometers.
    [0002] Although these various methods make it possible to produce very deep cavities, they also have the disadvantage of only making it possible to produce regular, ordered and homogeneous structures.
    [0003] However, it can also be demonstrated that a surface of random roughness has, compared to a surface consisting of homogeneous structures, the advantage of offering low absorption over a wide range of wavelengths. Schematically, we can consider that a pattern of random roughness is equivalent to the sum of a set of periodic networks each composed of cavities with identical depths, but having between them variations of depth and spatial period obeying a probability law, for example a Gaussian law. Such a random roughness pattern has a broad absorption spectrum by combining the absorptions of each of the networks that constitute it virtually, each network having a maximum absorption at a different wavelength than the others. It may thus be desirable to provide a method for producing a rough surface that is not "deterministic" (i.e., having a digitally generated rough pattern) and has a random rough pattern defined by a pattern law. probability. The article "Statistically modified surfaces: experimental solutions for controlled scattered light" by V.
    [0004] Brissonneau, F. Flory, L. Escoubas, G. Berginc, J. Appl. Phys. 112, 114325 (2012) describes a method for achieving such an objective. The method comprises a step of forming, on the substrate to be textured, a photosensitive resin layer comprising a first rough pattern composed of cavities of shapes, depths and random distributions. This pattern is obtained by a step of pre-insolation of the resin layer, followed by a step of random insolation thereof by means of a laser light beam, then a step of developing the resin insolated. The random insolation is implemented by means of a spatial light modulator using a matrix of micro-mirrors, associated with a scattering element of the laser beam. The depth distribution of cavities made in the resin, or "peak-valley heights", obeys an exponential probability law and is between 0.4 and 1.6 micrometers.
    [0005] The method then comprises a step of transferring the random rough pattern onto the substrate by reactive ion etching of the substrate through the resin layer. As the substrate is etched more rapidly than the resin because of its high reactivity with the chemical agents of the reactive gas, there is a phenomenon of "amplification" of the relief of the initial rough pattern during its transfer, the depths of the cavities obtained being increased. by a factor of about 2.5 in the experimental conditions described by the article. On the other hand, this increase of the relief does not affect the distribution law of the depths of cavities, which remains unchanged, so that the roughness obtained on the semiconductor is itself random.
    [0006] However, this method has the disadvantage of being complex to implement, the insolation of a resin by means of a spatial light modulator being poorly adapted to industrial manufacturing of components in the microelectronics industry. Thus, it might be desirable to provide a method for random texturing of a semiconductor substrate that does not require a spatial light modulator.
    [0007] For this purpose, the present invention is based on the observation that the reactive ion etching process is, by nature, an inhomogeneous process at the microscopic scale. Such a process reveals on the surface of the etched material microscopic cavities of random depths and periods, equivalent to the sum of a set of periodic gratings each consisting of cavities having identical depths and a constant period. The present invention is also based on the observation, demonstrated by the aforementioned document, that the transfer on a substrate of a random rough pattern made on a resin has the effect of increasing the depth of the pattern, without altering its character. random. The present invention is thus based on the idea of "amplifying", by this transfer technique, a random rough pattern obtained by exploiting the inhomogeneity property of reactive ion etching.
    [0008] More particularly, embodiments of the invention relate to a method of randomly texturing a photofunctional surface of a semiconductor substrate of a light emitting component or photoreceptor, comprising steps of depositing an etch mask on the substrate forming, in the etching mask, a non-homogeneous reactive ionic etching, a plurality of cavities of random shape, depth and distribution, forming a first random rough pattern, and transferring into the substrate, by reactive ion etching of the substrate through the mask etching, the first random rough pattern, to obtain on the surface of the substrate a second random rough pattern composed of cavities of random shape, depth and distribution.
    [0009] According to one embodiment, the material of the etching mask is chosen so as to have an etching rate lower than the etching rate of the substrate, with identical etching parameters, so that the random depth of the cavities of the second rough pattern random is statistically greater than the random depth of the cavities of the first random rough pattern.
    [0010] According to one embodiment, the etching rate of the substrate is at least 10 times greater than the etching rate of the mask.
    [0011] According to one embodiment, the etching mask comprises a material included in the group comprising: photosensitive resins, metals, an oxide or a silicon nitride.
    [0012] According to one embodiment, the transfer step of the first random rough pattern is continued until disappearance of the etching mask. According to one embodiment, the step of transferring the first random rough pattern is followed by a step of removing residues from the etching mask. According to one embodiment, the step of forming cavities in the etching mask is performed with first reactive ion etching parameters, until the appearance of orifices reaching the substrate, and the step of transferring the The first random rough pattern is essentially performed with second reactive ion etching parameters selected to slow down the etch rate of the mask relative to the rate at which the mask would be etched if the first reactive ion etching parameters were maintained. According to one embodiment, the beginning of the step of transferring the first random rough pattern into the substrate is detected by detecting the presence of atoms of the substrate material in a reactive ion etching reactor. According to one embodiment, the etching parameters include at least one of the following parameters: the pressure of a reactive gas in an etching reactor, the voltage applied to the ionization electrodes of the reactive gas, and the composition reactive gas. According to one embodiment, the substrate is monocrystalline.
    [0013] Embodiments of the invention also relate to a method of manufacturing a light emitting or photoreceptor semiconductor component, comprising a step of randomly texturing the substrate surface of the component according to the method of the invention.
    [0014] Embodiments of the process of the invention will hereinafter be described in a nonlimiting manner with reference to the accompanying drawings, in which: FIG. 1 represents a preparatory step of depositing an etching mask on a substrate the surface of which must be randomly textured; FIG. 2 schematically represents an example of implementation, in a reactor of reactive ion etching, of the random texturing method according to the invention; FIGS. 3A and 3B are respectively views. in section and from above of the substrate and the etching mask at a first instant of a first phase of the texturing process, FIGS. 4A and 4B are section and top views respectively of the substrate and the etching mask. a second instant of a first phase of the texturing method; FIG. 5 is a sectional view of the substrate and the etching mask at a first instant of a second phase of the method of FIG. 6 is a top view of the substrate and the etching mask at a second instant of the second phase, FIG. 7 is a sectional view of the substrate and the etching mask at a third instant of FIG. the second phase; FIG. 8 is a perspective view of the etching mask at the second instant of the first phase; FIG. 9 shows an exemplary distribution curve of the peak-valley heights of a random rough pattern present on the second phase; the mask at the second instant of the first phase; FIG. 10 is a top view of an example of a randomly textured substrate according to the method of the invention; FIG. 11 shows a distribution curve of the peak heights; valleys of a random rough pattern present on the surface of the substrate of Fig. 10; Fig. 12 shows a distribution curve of the random spatial period of the random rough pattern present on the surface of the substrate of Fig. 10; and the figure 13 is a sectional view of an optoelectronic component made according to a manufacturing method according to the invention. FIG. 1 schematically represents a preliminary step of deposition of an etching mask 2 on a substrate 1 whose surface must be randomly textured by means of the method according to the invention. The substrate 1 is made of a semiconductor material M1 and the etching mask made of a material M2. The material M2 is preferably chosen so as to have a reactive ion etching rate lower than the etching rate of the material M1, with identical etching parameters. In one embodiment of the method, the etching rate of the material M1 is at least 10 times greater than that of the material M2. The material M1 is, for example, monocrystalline silicon, and the material M2 is, for example, a positive photosensitive resin deposited by centrifugation.
    [0015] The etching mask 2 has a thickness E1, for example 1 micrometer. The random texturing method according to the invention is implemented here by means of a reactive ion etching reactor 50 with parallel electrodes, shown schematically in FIG. 2. The reactor 50 comprises a lower electrode 51 serving to support the substrate 1 , an upper electrode 52, a gas inlet 53, and a gas outlet 54 ("exhaust") connected to a vacuum pump (not shown) for maintaining a very low pressure P in the reactor. A gas analyzer 55, for example a mass spectrometer, associated with a flow meter, can be provided at the outlet of the reactor. The lower electrode 51 is capacitively coupled to an alternating voltage generator 56. The walls of the reactor 50 and the upper electrode 52 are connected to the ground of the generator 56. The generator 56 applies an alternating electric field to the lower electrode, oscillating for example at 13.56 MHz, and provides an adjustable electric power, for example of the order of a hundred watts. The random texturing method comprises two phases: a phase P1 of etching of the etching mask 2 by reactive ion etching, a phase P2 of etching of the substrate 1 by means of the etching mask 2, also by reactive ion etching.
    [0016] Phase P1 In order to initiate the phase P1, a reactive gas 57 of composition C1, for example a fluorinated gas such as carbon tetrafluoride CF4, is injected into the reactor 50. An oscillating electric field, present between the electrodes 51, 52, ionises the gas molecules by tearing out electrons, revealing an ionized gas (plasma) containing positive ions (cations) and free electrons. The free electrons are ejected from the gaseous mass while the cations, heavier and less responsive to variations in the electric field, remain initially suspended between the electrodes. The electrons that reach the walls of the reactor 50 or the upper electrode 52 are evacuated by the mass of the generator 56, while those that reach the lower electrode 51 charge it to a negative static potential. When the static potential difference between the electrodes 51, 52 reaches a certain threshold, the ions attracted by the negative electrode 51 are strongly accelerated by the electric field and are projected onto the surface of the substrate 1, here on the mask 2. This The etching process is anisotropic and comprises two process components that act together on the ion-bombarded surface: - a chemical etching process: the ions react chemically with the bombarded surface, usually after capturing free electrons in the vicinity of the surface and have formed radicals, - a process of physical etching (plasma etching) linked to the kinetic energy of the cations, which tear atoms from the bombarded surface by kinetic energy transfer.
    [0017] The chemical etching process is generally not very active on the mask, the etching of which is essentially provided by physical etching. The operator can, however, control at any time the physical etch rate and the reactive etch rate by acting on etch parameters such as gas concentration, inter-electrode voltage, or gas composition. FIGS. 3A and 3B are sectional and top views with a high magnification of part of the substrate 1 and the etching mask 2 at an initial time t1 of the phase P1. The reactive ionic etching process being inhomogeneous and random on the surface of the mask 2 microscopic cavities 10 of random shape, depth and distribution appear. FIGS. 4A and 4B are views in section and from above of the same part of the substrate and the mask, at a final moment t2 of the phase P1. Some cavities 10 have become orifices 11 passing through the mask 2 while new cavities 10 appeared. The assembly forms a random rough pattern 100 formed of cavities of shapes, depths dli, dlj, dlk and random distribution.
    [0018] Phase P2 The etching phase P2 of the substrate is initiated when the first orifices 11 appear in the etching mask 2. The phase P2 is preferably implemented with reactive ion etching parameters different from those of the phase P1, chosen so as to slow the burning speed of the mask relative to the speed with which it would be engraved if the burning parameters of the phase P1 were maintained. As indicated above, the etching parameters generally include the pressure of the reactant gas in the reactor, the voltage applied to the electrodes 51, 52, and the composition of the reactant gas. However, it is up to those skilled in the art to adjust these parameters according to the adjustment possibilities offered by the type of etching reactor used and / or the associated equipment.
    [0019] The instant in which the phase 2 is engaged can be detected by means of the gas analyzer 55 and the flow meter, by detecting atoms of the material M1 of the substrate in the gas extracted from the reactor 50, here silicon atoms or derived compounds, for example silicon dioxide if the etching is done in the presence of oxygen. Alternatively, the end of the phase P1 can be determined by timing, after calibration of the process. The phase P1 can also, in certain embodiments of the method of the invention, overlap the phase P2, that is to say include a beginning of etching of the substrate which continues during the phase P2 with parameters of different engraving. Also, in other embodiments, the phases P1 and P2 can be combined and carried out without modification of the etching parameters, so that it is not necessary to detect the end of the phase P1. FIG. is a sectional view of the aforementioned part of the substrate 1 and the mask 2 at a time t3 occurring shortly after the beginning of the phase P2. Cavities 20 appear rapidly in the substrate 1 by etching thereof through the openings 11 of the mask, while new cavities 10 appear in the mask 2 and others are transformed into orifices 11, all with a speed etching less than that of the substrate 1. Figure 6 is a top view of the aforementioned part of the mask 2 at a later time t4 of the P2 phase. The cavities 10 created during phase 1 have mostly been transformed into larger apertures 11, some of which have joined together to form even larger apertures, through which cavities have been etched in the substrate during that new cavities 10 have appeared in the mask and that others have turned into orifices 11. FIG. 7 is a sectional view of the above-mentioned part of the substrate 1 and of the mask 2 at a final or quasi-final time t5 phase P2. The mask 2 has only a very small thickness, from one to a few atomic layers. The substrate 1 has a random rough pattern 200 having a plurality of cavities 20 of shapes, depths and random distribution.
    [0020] The P2 phase can be continued until complete disappearance of the mask 2. The detection of the disappearance of the mask can be done by means of the gas analyzer 55, when characteristic chemical species of the material M2 are no longer detectable. Alternatively, the phase P2 may be followed by a phase P3 of rinsing the substrate to remove the mask residues, for example an acetone rinsing when the material M2 is a resin. The phase P2, or where appropriate the P3 phase, may be followed by a dopant implantation phase P4 on the surface of the substrate, in itself conventional, to improve the absorption of the random rough surface in a wavelength range of 1200 nm at 1600 nm. The dopant may for example be sulfur, and be implanted for example with concentrations of the order of 1014 to 1016 atoms.cm-2.
    [0021] As indicated above, the etching of the substrate through the etching mask therefore has the effect of transferring the random rough pattern 100 of the mask to the substrate, to obtain the random rough pattern 200. The depths of the cavities 20 (or peak-valley heights) forming the rough pattern 200, denoted d2i, d2j, d2k ... in FIG. 7, depend on the initial depths of the cavities 10 formed in the mask 2 before the engagement of the phase P2, denoted dli, dlj, dlk ... in Figure 4A, with an amplification factor related to the difference in etching rate of the substrate relative to that of the mask. It can be shown that the cavity depth distribution of the pattern 200 obeys the same probability law as the cavity depth distribution of the pattern 100. In other words, the depth amplification factor of the cavities does not change their relative probability density. To fix the ideas, FIG. 8 shows an example of rough pattern 100 obtained at the final moment t2 of the phase P1 (appearance of the orifices 11 and the beginning of etching of the substrate) and FIG. 9 shows the probability density Pd (dlr ) random depths dlr cavities 10 constituting this rough pattern. FIG. 10 shows an aspect of the rough pattern 200 obtained at the end of the phase P2, and FIG. 11 shows the probability density Pd (d2r) of the random depths d2r of the cavities 20 of this rough pattern. Figures 9 and 11 show that the probability densities are identical and take the form of a Gaussian function. In FIG. 9, the depths d1 of the cavities 10 are between about 0.1 micrometer and 1 micrometer. This latter value is imposed here by the thickness E1 of the mask 2 and corresponds to the maximum depth of a cavity 10 which has become an orifice 11. The curve Pd (d1r) has a peak in the vicinity of 0.5 micrometer corresponding to the probability maximum depth of a cavity. In FIG. 11, the depths d2r of the cavities 20 are between about 0.5 micrometers and 5 micrometers.
    [0022] The curve Pd (d2r) has a peak in the vicinity of 2.5 micrometers corresponding to the maximum probability of depth of a cavity 20. Those skilled in the art will note that these values are illustrative and may vary in large proportions in function of the materials Ml, M2 used and engraving parameters retained. The spatial distribution of the cavities itself obeys a law of probability, and FIG. 12 shows by way of example the curve Pd (T2r) of the probability density of the random spatial period T2r of the cavity network 20, considered here as the sum of a set of cavity networks of constant spatial period. In this example, the random spatial period T2r is between 0.1 micrometer and 3 micrometers and the function Pd (T2r) has a peak near the micrometer, corresponding to the highest probability of spatial period, therefore of distance between two cavities . Those skilled in the art will note that the example of probability laws shown in Figures 9, 11 and 12, here Gaussian, are purely illustrative and reflect only the experiments conducted. It is therefore not excluded that other laws of probability can be obtained with variants of the method of the invention.
    [0023] As indicated above, such a random roughness pattern 200 has a broad absorption spectrum by combining the absorptions of each of the networks that constitute it virtually, each network having a maximum absorption at a different wavelength than the others. In particular, a rough pattern having the aforementioned structural characteristics (FIGS 9, 11, 12) and produced on a silicon substrate has an excellent absorption of the order of 100% between 800 nm and 1000 nm, from 70 to 80% between 1000 nm and 1100 nm (infrared vision), and of the order of 20% beyond 1200 nm and up to 1600 nm, which can be improved by the P4 doping phase. The random texturing method according to the present invention is susceptible of various embodiments. It can be applied to various types of semiconductor substrates, doped or not, preferably monocrystalline silicon, germanium, zinc sulphide (ZnS), Zinc Selenide (ZnSe), and generally all single crystals. Also, experiments could be conducted on multi-crystalline substrates to determine the applicability of the process to this type of substrate. In some embodiments, the mask 2 may be in Chrome or Aluminum. The mask is then deposited under vacuum with a thin film technology, and can be very thin, for example 0.1 μm. Various types of photosensitive resin can also be used, negative or positive. A positive resin mask has a typical thickness in the range of 0.5 micrometers to 2 micrometers while a negative resin mask may have a thickness of up to 8 micrometers. Embodiments of the method may also employ a silicon oxide (SiO 2) or silicon nitride (Si 3 N 4) mask with a typical thickness of 0.3 micrometers to 2 microns, formed by chemical vapor deposition. In general, the choice of various combinations of materials Ml and M2 is within the reach of those skilled in the art, possibly after prior experiments to validate the choice envisaged. Also, the reactive ion etching process may be carried out with various reactive gases, in particular fluorinated or chlorinated gases, such as carbon tetrafluoride (CF4) or sulfur hexafluoride (SF6), with or without oxygen, the present invention. oxygen causing the simultaneous passivation of the substrate if it is silicon. The random texturing method according to the present invention is also capable of various applications, particularly in the context of the manufacture of photoreceptor optoelectronic components or photoemitters requiring a photofunctional surface or the emission of antireflection for photons, by photovoltaic optimizing example and the collection the image sensor cells. By way of example, FIG. 13 schematically represents a CMOS imager 60 made according to a manufacturing method according to the invention, including a step of random texturing of the photofunctional surface of the imager.
    [0024] After implantation of photodiodes 61 and transistors 62 in the substrate 1 of the imager, as well as various interconnection elements not shown for the sake of simplicity of the drawing, the surface 12 of the substrate 1 is subjected to a texturing process according to the invention. 'invention.
    [0025] After removing the random etching mask and possibly doping the substrate, the latter is covered by a dielectric layer 63 receiving interconnection tracks 64 of metal and a light mask 65, then by an RGB 66 color filter and microlenses 67 which focus incident light rays (L) on the photodiode regions 61.
    权利要求:
    Claims (11)
    [0001]
    REVENDICATIONS1. A method of randomly texturing a photofunctional surface of a semiconductor substrate (1) of a light emitting or photoreceptor component (60), comprising steps of: - depositing an etch mask (2) on the substrate (1) forming in the etching mask, by non-homogeneous reactive ion etching, a plurality of cavities (10, 11) of random shapes, depths (d1r) and distribution, forming a first random rough pattern (100), the substrate (1), by reactive ionic etching of the substrate through the etching mask (2), the first random rough pattern (100), to obtain on the surface of the substrate a second random rough pattern (200) composed of cavities ( 20) forms, depths (d2r) and random distribution.
    [0002]
    2. Method according to claim 1, wherein the material (M2) of the etching mask (2) is chosen so as to have an etching rate lower than the etching rate of the substrate, with identical etching parameters, so that the random depth (d2r) of the cavities of the second random rough pattern (200) is statistically greater than the random depth (d1r) of the cavities of the first random rough pattern.
    [0003]
    3. The method of claim 2, wherein the etching rate of the substrate (1) is at least 10 times greater than the etching rate of the mask (2).
    [0004]
    4. Method according to one of claims 1 to 3, wherein the etching mask comprises a material included in the group comprising: photosensitive resins, metals, an oxide or a silicon nitride.
    [0005]
    5. Method according to one of claims 1 to 4, wherein the step of transferring the first random rough pattern is continued until disappearance of the etching mask.
    [0006]
    The method of one of claims 1 to 4, wherein the step of transferring the first random rough pattern is followed by a step of removing residues from the etch mask.
    [0007]
    7. Method according to one of claims 1 to 6, wherein: the step of forming cavities (10, 11) in the etching mask is performed with first reactive ion etching parameters, up to the the appearance of orifices (11) reaching the substrate, and the step of transferring the first random rough pattern is essentially performed with second reactive ion etching parameters, chosen so as to slow down the etching rate of the mask relative to the speed with which the mask would be etched if the first 25 reactive ion etching parameters were maintained.
    [0008]
    The method of claim 7, wherein the beginning of the step of transferring the first random rough pattern into the substrate is detected by detecting the presence of atoms of the substrate material (M1) in an ion etching reactor. reactive.
    [0009]
    The method of claim 7, wherein the etching parameters include at least one of the following parameters: the pressure of a reactant gas in an etching reactor, the voltage applied to ionization electrodes of the reactant gas, and the composition of the reactive gas.
    [0010]
    10. Method according to one of claims 1 to 9, wherein the substrate is monocrystalline.
    [0011]
    A method of manufacturing a light emitting or photoreceptor semiconductor component (60) comprising a step of randomly texturing the substrate surface of the component by the method of one of claims 1 to 10.
    类似技术:
    公开号 | 公开日 | 专利标题
    FR3022070A1|2015-12-11|METHOD FOR RANDOM TEXTURING OF A SEMICONDUCTOR SUBSTRATE
    EP0770268A1|1997-05-02|Method for making a photovoltaic material or device, resulting material or device, and solar cell comprising same
    WO2011023894A2|2011-03-03|Method for texturing the surface of a silicon substrate, and textured silicon substrate for a solar cell
    CA2853751A1|2013-06-06|Infrared detector made up of suspended bolometric micro-plates
    EP2937902B1|2019-01-09|Cdhgte photodiode array
    JP2017518646A5|2018-06-28|
    EP3252830B1|2019-01-02|Method for forming patterns by ions implantations
    WO2016102628A1|2016-06-30|Method for producing patterns
    EP2784803A2|2014-10-01|Self-limiting etching method with multiple levels
    WO2017202859A1|2017-11-30|Method for forming a functionalised guide pattern for a graphoepitaxy method
    WO2005101527A1|2005-10-27|Method for making polysilicon films
    EP3631843B1|2021-03-17|Method for producing patterns in a substrate
    EP3249468B1|2018-12-26|Method for producing patterns
    EP2579321B1|2016-02-24|Method of manufacturing a structured semi-conductor substrate
    FR3016875A1|2015-07-31|PHOTONIC SURFACE STRUCTURE IN REFRACTORY MATERIAL AND METHOD FOR PRODUCING THE SAME.
    BE1025681B1|2019-05-28|Method of processing a substrate and integrated circuit device
    WO2013160570A1|2013-10-31|Method for producing a textured reflector for a thin-film photovoltaic cell, and resulting textured reflector
    EP3840019A1|2021-06-23|Method for forming a porous portion in a substrate
    EP2795677B1|2020-05-06|Process for texturing the surface of a silicon substrate, structured substrate and photovoltaic device comprising such a structured substrate
    EP3326027B1|2020-01-29|Optical filter and detector with resonating nanoparticules or microparticles
    EP3651214A1|2020-05-13|Manufacturing process of a photodiode and photodiode
    FR3081258A1|2019-11-22|METHOD FOR PRODUCING A PHOTODIODE AND PHOTODIODE
    FR2978688A1|2013-02-08|Structuring substrate that is useful for photonic crystals, by depositing optical convergent elements, transverse to light beam, on surface of substrate, and applying beam on substrate to form cavity, where the elements have dimensions
    FR3067858A1|2018-12-21|TWO-STAGE THIN FILM LASER ABLATION PROCESS FOR THE PRODUCTION OF SEMI-TRANSPARENT PHOTOVOLTAIC MODULES
    同族专利:
    公开号 | 公开日
    US9941445B2|2018-04-10|
    JP2017518646A|2017-07-06|
    IL249360A|2021-07-29|
    FR3022070B1|2016-06-24|
    JP6617300B2|2019-12-11|
    EP3152786A1|2017-04-12|
    WO2015186064A1|2015-12-10|
    IL249360D0|2017-02-28|
    US20170141264A1|2017-05-18|
    KR20170016932A|2017-02-14|
    CA2953247A1|2015-12-10|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    EP1345275A1|2000-09-22|2003-09-17|Shiro Sakai|Method for roughening semiconductor surface|
    WO2012061436A2|2010-11-01|2012-05-10|Intevac, Inc.|Dry etching method of surface texture formation on silicon wafer|
    US7247218B2|2003-05-16|2007-07-24|Applied Materials, Inc.|Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power|
    EP2049710A4|2005-11-18|2012-07-04|Replisaurus Group Sas|Master electrode and method of forming it|
    KR101283261B1|2007-05-21|2013-07-11|엘지이노텍 주식회사|Light emitting device and mehtod for manufacturing the same|
    CN102362356A|2009-03-25|2012-02-22|三菱电机株式会社|Method for roughening substrate surface and method for manufacturing photovoltaic device|
    KR101250450B1|2010-07-30|2013-04-08|광주과학기술원|Fabricating method of micro nano combination structure and fabricating method of photo device integrated with micro nano combination structure|
    US9956743B2|2010-12-20|2018-05-01|The Regents Of The University Of California|Superhydrophobic and superoleophobic nanosurfaces|
    FR2981196B1|2011-10-06|2014-12-26|Altis Semiconductor Snc|METHOD FOR MANUFACTURING A STRUCTURED SEMICONDUCTOR SUBSTRATE|
    KR101942092B1|2012-07-30|2019-01-25|한국전자통신연구원|Method Of Fabricating Organic Light Emitting Device|
    US9705017B2|2013-09-27|2017-07-11|Danmarks Tekniske Universitet|Nanostructured silicon based solar cells and methods to produce nanostructured silicon based solar cells|JPWO2018180765A1|2017-03-31|2020-02-13|日本電気株式会社|Manufacturing method of texture structure|
    JP2020520120A|2017-05-13|2020-07-02|アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ|Fluid deposition and high density plasma treatment process cycles for high quality void filling.|
    CN108365028A|2018-01-30|2018-08-03|北京世纪金光半导体有限公司|A kind of silicon carbide device surface wool manufacturing method|
    CN110137308B|2019-05-22|2021-03-26|中国科学院微电子研究所|Infrared absorption film and preparation method thereof|
    法律状态:
    2015-06-19| PLFP| Fee payment|Year of fee payment: 2 |
    2015-12-11| PLSC| Search report ready|Effective date: 20151211 |
    2016-06-27| PLFP| Fee payment|Year of fee payment: 3 |
    2017-06-21| PLFP| Fee payment|Year of fee payment: 4 |
    2018-06-20| PLFP| Fee payment|Year of fee payment: 5 |
    2020-06-19| PLFP| Fee payment|Year of fee payment: 7 |
    2021-06-15| PLFP| Fee payment|Year of fee payment: 8 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1455068A|FR3022070B1|2014-06-04|2014-06-04|METHOD FOR RANDOM TEXTURING OF A SEMICONDUCTOR SUBSTRATE|FR1455068A| FR3022070B1|2014-06-04|2014-06-04|METHOD FOR RANDOM TEXTURING OF A SEMICONDUCTOR SUBSTRATE|
    JP2016571237A| JP6617300B2|2014-06-04|2015-06-02|Method for randomly texturing a semiconductor substrate|
    EP15732422.9A| EP3152786A1|2014-06-04|2015-06-02|Method for the random texturing of a semiconductor substrate|
    CA2953247A| CA2953247A1|2014-06-04|2015-06-02|Method for the random texturing of a semiconductor substrate|
    US15/316,387| US9941445B2|2014-06-04|2015-06-02|Method for randomly texturing a semiconductor substrate|
    PCT/IB2015/054176| WO2015186064A1|2014-06-04|2015-06-02|Method for the random texturing of a semiconductor substrate|
    KR1020177000252A| KR102368258B1|2014-06-04|2015-06-02|Method for the random texturing of a semiconductor substrate|
    IL249360A| IL249360A|2014-06-04|2016-12-04|Method for the random texturing of a semiconductor substrate|
    [返回顶部]